• 文献标题:   Flexible 3D Graphene Transistors with Ionogel Dielectric for Low-Voltage Operation and High Current Carrying Capacity
  • 文献类型:   Article
  • 作  者:   AMERI SK, SINGH PK, D ANGELO AJ, PANZER MJ, SONKUSALE SR
  • 作者关键词:  
  • 出版物名称:   ADVANCED ELECTRONIC MATERIALS
  • ISSN:   2199-160X
  • 通讯作者地址:   Tufts Univ
  • 被引频次:   6
  • DOI:   10.1002/aelm.201500355
  • 出版年:   2016

▎ 摘  要

In this paper, an ionogel-gated flexible 3D graphene transistor made from graphene foam, consisting of a network of few layers graphene, is reported. The presented transistor, fabricated on thin, 28 mu m parylene, flexible substrate, demonstrates low-voltage operation (