• 文献标题:   Berry-phase-mediated topological thermoelectric transport in gapped single and bilayer graphene
  • 文献类型:   Article
  • 作  者:   ZHANG CW, TEWARI S, DAS SARMA S
  • 作者关键词:   band structure, berry phase, chemical potential, graphene, nanostructured material, thermomagnetic effect
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Washington State Univ
  • 被引频次:   28
  • DOI:   10.1103/PhysRevB.79.245424
  • 出版年:   2009

▎ 摘  要

We consider the anomalous thermoelectric transport in gapped single and bilayer graphene where the gap may be due to broken inversion symmetry. In the presence of the gap, nontrivial Berry phase effects can be shown to mediate a transverse thermoelectric voltage in response to an applied temperature gradient even in the absence of a perpendicular magnetic field. This spontaneous anomalous Nernst effect is nonzero for nonuniform chemical potential in the two inequivalent valleys in the graphene band structure. Conversely, the Nernst response can be used to create a valley-index polarization between the two transverse sample edges as in the analogous valley Hall effect.