• 文献标题:   Coplanar-Gate Transparent Graphene Transistors and Inverters on Plastic
  • 文献类型:   Article
  • 作  者:   KIM BJ, LEE SK, KANG MS, AHN JH, CHO JH
  • 作者关键词:   graphene transistor, coplanargate configuration, transparent electronic, flexible electronic
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   81
  • DOI:   10.1021/nn3020486
  • 出版年:   2012

▎ 摘  要

Transparent flexible graphene transistors and inverters in a coplanar-gate configuration were presented for the first time using only two materials: graphene and an ion gel gate dielectric. The novel device configuration simplifies device fabrication such that only two printing steps were required to fabricate transistors and inverters. The devices exhibited excellent device performances including low-voltage operation with a high transistor-on-current and mobility, excellent mechanical flexibility, environmental stability, and a reasonable inverting behavior upon connecting the two transistors.