▎ 摘　　要

A comparative study based on the effect of various novel reduction techniques for the fabrication of devices for electromagnetic interference (EMI) shielding in X-band frequency is reported. Among various reduction methods, we have used hydrazine hydrate and thermal annealing, low energy ion beam implantation and swift heavy ion irradiation. The synthesis as well as reduction of the samples is confirmed by the Raman spectra and FT-IR studies. The room temperature dc electrical conductivity is correlated with the extent of reduction of graphene oxide samples. The sample reduced with hydrazine hydrate and swift heavy ion irradiation of Ag+8 at 100 MeV has highest dc electrical conductivity value, which leads to higher EMI shielding effectiveness of 55.29 dB and skin depth of 0.0188 cm. It is also observed that the skin depth decreases with increase in electrical conductivity. This suggests a strong potential of these samples for high performance EMI shielding applications.