• 文献标题:   Low-temperature growth of graphene on iron substrate by molecular beam epitaxy
  • 文献类型:   Article
  • 作  者:   ZHENG RJ, XU ZG, KHANAKI A, TIAN H, ZUO Z, ZHENG JG, LIU JL
  • 作者关键词:   graphene, fe, molecular beam epitaxy, low temperature growth
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   5
  • DOI:   10.1016/j.tsf.2017.02.057
  • 出版年:   2017

▎ 摘  要

Graphene has attracted a great deal of interest due to its fascinating properties and a wide variety of potential applications. Several methods have been used to achieve high-quality graphene films on different substrates. However, there have been only a few studies on graphene growth on iron (Fe) and the growth mechanism remains unclear. This paper systematically investigates temperature-dependent growth of graphene on Fe substrate by gas-source molecular beam epitaxy. Two-dimensional (2D), large-area graphene samples were grown on Fe thin films, and characterized by Raman, X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy, transmission electron microscopy and atomic force microscopy. It is found that graphene flakes can be grown on Fe at a growth temperature as low as 400 degrees C and the optimized large-area graphene growth temperature is relatively low between 500 degrees C and 550 degrees C . The graphene growth on Fe that undergoes the formation and decomposition of iron carbide is discussed. (C) 2017 Elsevier B.V. All rights reserved.