• 文献标题:   Growth direction manipulation of few-layer graphene in the vertical plane with parallel arrangement
  • 文献类型:   Article
  • 作  者:   ZHANG Y, TANG S, DENG DL, DENG SZ, CHEN J, XU NS
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Sun Yat Sen Univ
  • 被引频次:   15
  • DOI:   10.1016/j.carbon.2012.12.078
  • 出版年:   2013

▎ 摘  要

Vertical few-layer graphene (FLG) sheets have potential applications as field emitters and super capacitors. However, it remains a challenge to controllably grow FLG with vertical and parallel orientations. We intentionally designed the substrate surface structure to manipulate the distribution of the plasma sheath and induce the direction of the built-in electric field to guide the growth direction of the FLG in two dimensions. The effects of the plasma sheath and the built-in field on the FLG growth are discussed. The electrical and field emission characteristics of single sheet FLG with parallel and random types were measured, and they demonstrate similar and good characteristics. This method provides a way to controllably grow parallel and vertical FLG arrays. (C) 2013 Elsevier Ltd. All rights reserved.