• 文献标题:   Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry
  • 文献类型:   Article
  • 作  者:   NISHIGUCHI K, YAMAGUCHI H, FUJIWARA A
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW APPLIED
  • ISSN:   2331-7019
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevApplied.19.L011003
  • 出版年:   2023

▎ 摘  要

We demonstrate the detection of mechanical oscillations of a nanoelectromechanical system (NEMS) composed of a multilayer-graphene (MLG) membrane by using a Si field-effect transistor (FET). The MLG membrane of 500 nm in length is suspended above multiple nanowire channels of the FET functioning as a sensor with high sensitivity. A microwave probe in contact with the FET is connected to double-resonant circuits composed of two inductors and capacitors, and a radio-frequency (rf) signal drives the FET in the resonant condition. When the MLG membrane functioning as a gate of the FET oscillates in mechanical resonance and modulates impedance of the FET, this modulation is monitored using a reflected signal from the resonant circuits. By adjusting the resonant condition using a variable capacitor, the mechanical oscillations of the MLG membrane are detected at 340 MHz. Such rf-signal-driven readout of the NEMS operating at subgigahertz frequency will lead to highly sensitive and functional sensors for small mass and quantum mechanics as well as timing devices.