• 文献标题:   Electron transport in boron functionalised armchair graphene nanoribbons: Potential interconnects
  • 文献类型:   Article
  • 作  者:   AGRAWAL S, SRIVASTAVA A, KAUSHAL G
  • 作者关键词:   agnr, dft, doping, conductance, currentvoltage iv, interconnect
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.ssc.2021.114209 EA FEB 2021
  • 出版年:   2021

▎ 摘  要

Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) formalism is employed to explore the electronic and transport properties of armchair graphene nanoribbons (AGNR) doped with Boron (B) at 6.25%, 12.5%, 18.75% and 25% doping concentrations. The modeled (3,0) AGNR exhibit a semi-conducting behaviour with a band gap of 1.06eV and as a effect of Boron doping (6.25%, 12.5% and 18.75%) shows fluctuating semiconducting or metallic behaviour. However, at around the boron concentration of 25% AGNR remains metallic it exhibit relatively better conductance than silver, gold, copper and its other B doped counterparts. Further, the interesting linear Current-Voltage characteristics and conductance of boron doped AGNR may lead to its application as interconnects.