• 文献标题:   Effect of Stacking Order on the Electric-Field Induced Carrier Modulation in Graphene Bilayers
  • 文献类型:   Article
  • 作  者:   SAGAR A, LEE EJH, BALASUBRAMANIAN K, BURGHARD M, KERN K
  • 作者关键词:  
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Max Planck Inst Festkorperforsch
  • 被引频次:   17
  • DOI:   10.1021/nl9012002
  • 出版年:   2009

▎ 摘  要

When planar graphene sheets are stacked on top of each other, the electronic structure of the system varies with the position of the subsequent sublattice atoms. Here, we employ scanning photocurrent microscopy to study the disparity in the behavior of charge carriers for two different stacking configurations. It has been found that deviation from the regular Bernal stacking decouples the sheets from each other, which Imparts effective electrostatic screening of the farther layer from the underlying backgate. Electrochemical top-gating is demonstrated as a means to selectively tune the charge carrier density in the decoupled upper layer.