• 文献标题:   Transport in indium-decorated graphene
  • 文献类型:   Article
  • 作  者:   CHANDNI U, HENRIKSEN EA, EISENSTEIN JP
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   CALTECH
  • 被引频次:   20
  • DOI:   10.1103/PhysRevB.91.245402
  • 出版年:   2015

▎ 摘  要

The electronic-transport properties of single-layer graphene that has a dilute coating of indium adatoms have been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low-field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.