▎ 摘　　要

We show the suppression of nucleation density in chemical vapor deposited graphene through the use of a sputtered metal coating on the exterior of a copper catalyst enclosure, resulting in the growth of sub-centimeter scale single crystal graphene domains and complete elimination of multilayer growth. The sputtered coating suppresses nucleation density by acting as both a diffusion barrier and as a sink for excess carbon during the growth, reducing the carbon concentration in the interior of the enclosure. Field effect mobility of hBN-templated devices fabricated from graphene domains grown in this way show room temperature carrier mobilities of 12 000 cm(2) V-1 s(-1) and an absence of weak localization at low temperature. These results indicate a very low concentration of line and point defects in the grown films, which is further supported by Raman and transmission electron microscopic characterization.