• 文献标题:   Interlayer Decoupling in 30 degrees Twisted Bilayer Graphene Quasicrystal
  • 文献类型:   Article
  • 作  者:   DENG B, WANG BB, LI N, LI RT, WANG YN, TANG JL, FU Q, TIAN Z, GAO P, XUE JM, PENG HL
  • 作者关键词:   twisted bilayer graphene, quasicrystal, interlayer coupling, epitaxial growth, electronic structure
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Peking Univ
  • 被引频次:   10
  • DOI:   10.1021/acsnano.9b07091
  • 出版年:   2020

▎ 摘  要

Stacking order has a strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30 degrees-twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30 degrees-twisted bilayer graphene (30 degrees-tBLG) is determined to have quasicrystal-like symmetry. The electronic properties and interlayer coupling of the 30 degrees-tBLG are investigated using scanning tunneling microscopy and spectroscopy. The energy-dependent local density of states with in situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG and provides insights on the electronic properties and interlayer coupling in this intriguing system.