▎ 摘　　要

For exploring a strong electro-optic effect from a graphene/hexagonal boron nitride (hBN) structure, here a comprehensive study for investigating the integrated broadband graphene/hBN modulators has been presented. Two representative configurations with a Si3N4 waveguide were compared, focusing on optimizing the hBN thickness, waveguide width and height, and graphene size to balance their performances. It was found that 200 mu M long devices with 65 nm hBN thickness allow for similar to 80 GHz modulation bandwidth, 35.4 dB extinction ratio, and over 700 nm operation spectral range. Compared to the ridge Si3N4 waveguide, the buried Si(3)N(4 )waveguide was more suitable as an optical waveguide for the graphene/hBN modulator to obtain a large modulation depth of similar to 0.17 dB mu m and a large operation spectral range from 750 to similar to 1640 nm. (C) 2020 Optical Society of America