▎ 摘　　要

An important prerequisite to translating the exceptional intrinsic performance of 2D materials such as graphene and transition metal dichalcogenides into useful devices precludes their successful integration within the current 3D technology. This review provides theoretical insight into nontrivial issues arising from interfacing 2D materials with 3D systems including epitaxy and ways to accommodate lattice mismatch, the key role of contact resistance and the effect of defects in electrical and thermal transport.