• 文献标题:   Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon
  • 文献类型:   Article
  • 作  者:   MURATA H, TOKO K, SAITOH N, YOSHIZAWA N, SUEMASU T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Tsukuba
  • 被引频次:   9
  • DOI:   10.1063/1.4974318
  • 出版年:   2017

▎ 摘  要

Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated the metal-induced layer exchange growth of a sputtered amorphous C layer using Ni as a catalyst. A MLG layer uniformly formed on a SiO2 substrate at 600 degrees C by layer exchange between the C and Ni layers. Raman spectroscopy and electron microscopy showed that the resulting MLG layer was highly oriented and contained relatively few defects. The present investigation will pave the way for advanced electronic devices integrated with carbon materials. Published by AIP Publishing.