▎ 摘　　要

We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator, and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np(+) n regime, which is in good agreement with the numerical simulation. Though the effect observed is mild and needs more validation for future application with better device design, the qualitative tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future. We also comment on some possible guidelines to improve the quantitative device performance.