▎ 摘　　要

In this work, a P-Sn@G composite is synthesized using a direct high-energy ball milling (HEBM) method with P, Sn, and expanded graphite (EG). Thein situformed few layered graphene (FLG) prevents the formation of Sn(4)P(3)and establishes strong Sn-C and P-C co-bonding in the resultant P-Sn@G composite. Excellent lithium storage is also revealed due to the key effect of FLG to benefit the electronic transfer and buffer expansion stress of the electrode from Sn and P.