• 文献标题:   Thermionic emission current in graphene-based electronic devices
  • 文献类型:   Article
  • 作  者:   MAO LF
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING
  • ISSN:   0947-8396 EI 1432-0630
  • 通讯作者地址:   Univ Sci Technol Beijing
  • 被引频次:   4
  • DOI:   10.1007/s00339-019-2627-4
  • 出版年:   2019

▎ 摘  要

A new current equation for graphene/semiconductor or graphene/metal junctions in graphene-based electronic devices is proposed based on the thermionic emission theory. Temperature-dependent current density predicted by the proposed model agrees well with those experimental data reported in the literature. It can also explain the electric field and temperature-dependent effective Schottky barrier height observed in experiments. This is because a high drift velocity in graphene and its dependence on temperature can lead to a change in the effective Schottky barrier height. Due to the nonlinearity between current and temperature, the Richardson's law will be broken down. The proposed model will benefit to better understand the current transport mechanism in graphene-like materials and graphene-based electronic devices.