• 文献标题:   Partial positive refraction in asymmetric Veselago lenses of uniaxially strained graphene
  • 文献类型:   Article
  • 作  者:   BETANCUROCAMPO Y
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Nacl Autonoma Mexico
  • 被引频次:   3
  • DOI:   10.1103/PhysRevB.98.205421
  • 出版年:   2018

▎ 摘  要

Asymmetric Veselago lenses (AVLs) can be created from ballistic p-n and n-p-n homojunctions of uniaxially strained graphene. This atypical converging electron flow emerges by applying uniaxial tension out of the device's symmetry axes. Part of the electron flow needs to be positively refracted to focus on an asymmetric spot, whose location is tunable with the strain. In AVLs, Klein tunneling is angularly shifted with regard to the normal incidence. This perfect transmission occurs in the straight line that connects the point source and focus, which is unaffected by variation of the Fermi level and voltage gate. Moreover, the mirror symmetry breaking by the strain also causes the asymmetry in Fabry-Perot interference. The novel electron optical laws allow us to evidence that reflected and refracted electrons in AVLs lie on the same straight line with opposite group velocities and pseudospins. Unlike isotropic graphene, electrons under normal incidence present backscattering, angles of reflection, and refraction different from zero. The average particle transmission is higher (lower) than the isotropic case when the tensile strain is increased near (far away from) the normal direction. These results may be useful for designing strain-bendable probing tips in scanning tunneling microscopes.