• 文献标题:   Doping and Stress Induced Raman Shifts in Pd-Decorated CVD Grown Graphene
  • 文献类型:   Article
  • 作  者:   KUMAR R
  • 作者关键词:   graphene, electronic interface, interface modification, sensor, nanoscale material
  • 出版物名称:   ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY
  • ISSN:   2162-8769 EI 2162-8777
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1149/2162-8777/ac04f9
  • 出版年:   2021

▎ 摘  要

In this article, we study the interactions of graphene and Pd by using Raman spectroscopy. Graphene grown by chemical vapor deposition (CVD) method was decorated with Pd films with varying thickness ranging from 5 to 25 nm. It has been shown that the positions of both G and 2D peaks in Raman spectra of Pd-graphene (Pd-G) composite are shifted in both sides of the main peaks of graphene and highly dependent on the thickness of the Pd over layer. A blue shift in both G and 2D bands has been observed for lower Pd thickness (= 15 nm).