• 文献标题:   XNOR/XOR graphene logic gate based on plasma disperison effect
  • 文献类型:   Article
  • 作  者:   LI ZQ, HAN X, XIE RJ, WANG ZG, GUO SL, WEI WJ, LI X
  • 作者关键词:   xnor/xor logic gate, doublelayer graphene, microring resonator, ushaped waveguide
  • 出版物名称:   SUPERLATTICES MICROSTRUCTURES
  • ISSN:   0749-6036
  • 通讯作者地址:   Yanshan Univ
  • 被引频次:   1
  • DOI:   10.1016/j.spmi.2020.106413
  • 出版年:   2020

▎ 摘  要

In this paper, a novel XNOR/XOR logic gate with the double-layer graphene embedded in micro-ring waveguide based on plasma disperison effect is proposed. By changing the voltage loaded on the graphene, the light absorption capacity of graphene is affected, changing the resonant state of the micro-ring resonator, and the logic operation function of XNOR/XOR is achieved simultaneously in two output ports. When the working wavelength is 1.551 mu m and the chemical potential of graphene is 0.45eV or 0.50eV, the light intensity of the two output ports is simulated and calculated by MATLAB and COMSOL software. The simulation results reveal that under the four logical operands of '00', '01', '10', '11', the novel U-shaped micro-ring waveguide structure with double-layer graphene as the modulation region can perform the logic operation of XNOR/XOR at high speed. In addition, compared with the existing micro-ring logic gates, the proposed structure can not only greatly enhance the extinction ratio and 3 dB bandwidth of the logic gate, but also reduce the modulation voltage, insertion loss and crosstalk.