▎ 摘　　要

Graphene has been derived from graphite using a high-throughput liquid phase exfoliation technique, using two anionic surfactants with same polar head and different hydrophobic tail. Raman spectra indicate that the resulting samples are few-layer graphene, with large D-band, possibly arising from the surfactant-decorated edges. Scanning tunnelling spectroscopy (STS) demonstrates the linear density of states, with zero band gap to nearly 0.44 and 0.53 eV respectively for sodium dodecyl benzene sulfonate (SDBS) and dioctyl sodium sulfosuccinate (AOT) exfoliated graphene and the Fermi level has been slightly shifted towards the valence band due to the anionic surfactants. Thin film transistors (TFT's) fabricated using these exfoliated graphene as channel layers exhibit ambipolar behaviour, with Dirac points shifted due to inherent charges in the layers. It is observed that the performance of transistors such as transconductance, carrier mobility, and Dirac point strongly depend on the surfactants used.