• 文献标题:   Evidence for a spontaneous gapped state in ultraclean bilayer graphene
  • 文献类型:   Article
  • 作  者:   BAO WZ, VELASCO J, ZHANG F, JING L, STANDLEY B, SMIRNOV D, BOCKRATH M, MACDONALD AH, LAU CN
  • 作者关键词:   topological state, anomalous hall, spontaneous quantum hall state, electronelectron interaction, layer antiferromagnet
  • 出版物名称:   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
  • ISSN:   0027-8424
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   84
  • DOI:   10.1073/pnas.1205978109
  • 出版年:   2012

▎ 摘  要

At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single- and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although sigma(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T-c of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.