• 文献标题:   Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   SARAIVASOUZA A, SMEU M, DA SILVA JG, GIRAO EC, GUO H
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY C
  • ISSN:   2050-7526 EI 2050-7534
  • 通讯作者地址:   Univ Fed Piaui
  • 被引频次:   2
  • DOI:   10.1039/c7tc03424e
  • 出版年:   2017

▎ 摘  要

Recently, a new semiconductor two-dimensional (2D) material, namely, holey nitrogenated graphene 2D crystal (C2N-h2D), has been fabricated by using a bottom-up wet-chemical reaction. Using first principles density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) technique, we investigate the atomic, electronic and quantum transport properties of porous C2N nanoribbons having both zigzag- and armchair-terminated edges. The zigzag C2N-h nanoribbons (ZC(2)N-hNRs) are semiconductors with an indirect band gap that decreases as the ribbon width increases. Meanwhile, the armchair C2N-h nanoribbons (AC(2)N-hNRs) show a metallic behavior for all ribbon widths, except for one of the candidates considered in this study, which presents a small band gap (0.14 eV). Interestingly, non-equilibrium calculations suggest that these structures display edge-dependent electronic transport properties where the armchair C2N-hNRs show a strong negative differential resistance (NDR) behavior with current peak-to-valley ratios that remarkably increase with increasing ribbon width, and non-linear current-voltage characteristics were found for the zigzag C2N-hNRs.