▎ 摘　　要

Stress-free InN nanowires (NWs) have been grown on Au/graphene/GaN/sapphire substrate by atmospheric pressure metal-In sublimation method. The phonon E-2(high) and A(1)(LO) mode in Raman spectra of InN grown on graphene is observed at 490.8 and 585 cm(-1) respectively, which is similar to that of bulk InN. The high resolution TEM (HRTEM) image of InN NWs shows that the interplanar spacing of (0002) and (11 - 20) are 2.85 angstrom and 1.77 angstrom, which is according with the XRD result. All the results confirm that Au-catalyst assists the growth of InN NWs, and the stress is released by the aid of the graphene inter-layer. (C) 2017 Elsevier B.V. All rights reserved.