• 文献标题:   Strain dependent resistance in chemical vapor deposition grown graphene
  • 文献类型:   Article
  • 作  者:   FU XW, LIAO ZM, ZHOU JX, ZHOU YB, WU HC, ZHANG R, JING GY, XU J, WU XS, GUO WL, YU DP
  • 作者关键词:   chemical vapour deposition, electric admittance, graphene, plastic deformation
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Peking Univ
  • 被引频次:   148
  • DOI:   10.1063/1.3663969
  • 出版年:   2011

▎ 摘  要

The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5%, while it fails to recover after the plastic deformation at 5%. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663969]