▎ 摘　　要

We demonstrate the crystallization of thermally deposited amorphous germanium (Ge) microstrips on single layer graphene (SLG) by rapid melting growth. Lateral growth of large grain crystalline Ge was successfully obtained over entire microstrip structure. SLG has shown its capability to suppress the spontaneous nucleation in the melting Ge, where no or less intermixing of C and Ge atoms has been detected. The interaction of C atoms from the graphene and Ge atoms at the interface is the possible reason for the observation of large compressive strain generated in the Ge strip grown on SLG. This technique provides an innovative breakthrough towards the realization of single-crystalline Ge-on-insulator (GOI) structure on SLG to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities. (C) 2016 Elsevier B.V. All rights reserved.