• 文献标题:   Electronic Transport in Two Stacked Graphene Monolayers
  • 文献类型:   Article
  • 作  者:   CHAE DH, ZHANG D, HUANG XT, VON KLITZING K
  • 作者关键词:   graphene, nonbernal stacked graphene bilayer, quantum hall effect, interlayer transport, electrical coupling
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Korea Res Inst Stand Sci
  • 被引频次:   14
  • DOI:   10.1021/nl300569m
  • 出版年:   2012

▎ 摘  要

We report on interlayer and lateral electronic transport measurements in two stacked graphene monolayers which have separate electrical contacts. The current-voltage characteristic across the two layers shows linear Ohmic behavior at zero magnetic field. At high magnetic fields, sequences of quantum Hall plateaus of the overlap region with filling factors 4, 8, and 12 are observed which can be explained by equilibration of the edge channel potentials of the individual graphene layers. An anomaly is observed at total filling factors +/- 2 in the overlap region. The I-V characteristic for interlayer transport turns nonlinear, and the Hall signal vanishes, indicating a magnetic field induced electrical decoupling of the two graphene layers.