• 文献标题:   Growth Conditions of Graphene Grown in Chemical Vapour Deposition (CVD)
  • 文献类型:   Article
  • 作  者:   SIRAT MS, ISMAIL E, PURWANTO H, ABID MAAM, ANI MH
  • 作者关键词:   chemical vapour deposition cvd, graphene, optimization
  • 出版物名称:   SAINS MALAYSIANA
  • ISSN:   0126-6039
  • 通讯作者地址:   IIUM
  • 被引频次:   4
  • DOI:   10.17576/jsm-2017-4607-04
  • 出版年:   2017

▎ 摘  要

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I-2D/I-G ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.