▎ 摘　　要

We grow graphene film on silicon substrates having various orientations by simple heating in the presence of carbon source gas. We observed that a 3C-SiC (111) film would form upon carburizing silicon with carbon deposited from a carbon source because it is well lattice-matched with Si (110) (less than 2%). Graphene grew on the buffer layer of 3C-SiC (111). The surface consists of hexagonal arrays that can act as a template for graphene growth. This simple and inexpensive method of forming graphene on silicon wafer in situ is compatible with silicon technology. (C) 2012 Elsevier B. V. All rights reserved.