• 文献标题:   Probing zone-boundary optical phonons in doped graphene
  • 文献类型:   Article
  • 作  者:   SAHA SK, WAGHMARE UV, KRISHNAMURTHY HR, SOOD AK
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Indian Inst Sci
  • 被引频次:   15
  • DOI:   10.1103/PhysRevB.76.201404
  • 出版年:   2007

▎ 摘  要

We use first-principles density-functional theory to determine the adiabatic frequency shift of the A(1)(')-K and E-'-K phonons in a monolayer graphene as a function of both electron and hole doping. Compared to the results for the E-2g-Gamma phonon (Raman G band), the results for the A(1)(')-K phonon are dramatically different, while those for the E-'-K phonon are not so different. Furthermore, we calculate the frequency shifts, as a function of the charge doping of the (K+Delta K) phonons responsible for the Raman 2D band-a key fingerprint of graphene, where parallel to Delta K parallel to is determined by the double-resonance Raman process.