• 文献标题:   Effects of acetylene flow rate and processing temperature on graphene films grown by thermal chemical vapor deposition
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   CHEN CS, HSIEH CK
  • 作者关键词:   graphene, chemical vapor deposition, acetylene, low temperature
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090
  • 通讯作者地址:   Ming Chi Univ Technol
  • 被引频次:   13
  • DOI:   10.1016/j.tsf.2014.12.012
  • 出版年:   2015

▎ 摘  要

We used thermal chemical vapor deposition (CVD) to synthesize few-layer graphene (FLG) films at a low temperature (600 degrees C). The FLG films were synthesized on Ni foils using a gaseous mixture of various ratios of H-2 to acetylene (C2H2). We investigated that the effects of C2H2 flow on the structural properties of graphene. The quality of low-temperature CVD FLG films was investigated by Raman spectroscopy, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy. The results of Raman spectroscopy revealed that C2H2 flux clearly influences the features of FLG films. To enhance the quality of FLG films grown by low-temperature CVD, the films were grown under various gas flow ratios. The results demonstrated that the common thermal CVD method that uses C2H2 as a supplemental carbon source constitutes a low-cost and easy way to synthesize graphene films at low temperature for graphene-based applications. (C) 2014 Elsevier B.V. All rights reserved.