▎ 摘　　要

Resistivity, rho(T), and magnetoresistance (MR) are investigated in graphene grown on SiC (0 0 0 1), at temperatures between T similar to 4-85 K in pulsed magnetic fields of B up to 30 T. According to the Raman spectroscopy and Kelvin-probe microscopy data, the material is a single-layer graphene containing similar to 20% double-layer islands with a submicron scale and relatively high amount of intrinsic defects. The dependence of rho(T) exhibits a minimum at temperature T-m similar to 30 K. The low-field Hall data have yielded a high electron concentration, n(R) approximate to 1.4 x 10(13) cm(-2) connected to intrinsic defects, and a mobility value of mu H similar to 300 cm(2) (Vs)-1 weakly depending on T. Analysis of the Shubnikov-de Haas oscillations of MR, observed between B similar to 10-30 T, permitted to establish existence of the Berry phase beta similar to 0.55 and the cyclotron mass, m(c) approximate to 0.07 (in units of the free electron mass) close to expected values for the single-layer graphene, respectively. MR at 4.2 K is negative up to B similar to 9 T, exhibiting a minimum near 3 T. Analysis of MR within the whole range of B = 0-10 T below the onset of the SdH effect has revealed three contributions, connected to (i) the classical MR effect, (ii) the weak localization, and (iii) the electron-electron interaction. Analysis of the(T) dependence has confirmed the presence of the contributions (ii) and (iii), revealing a high importance of the electron-electron scattering. As a result, characteristic relaxation times were obtained; an important role of the spin-orbit interaction in the material has been demonstrated, too.