▎ 摘　　要

In this paper, the schottky diode which is based on the bilayer graphene nanoribbon application is presented. The current-voltage characteristic of a schottky diode has been studied as a function of physical parameters such as effective mass (m*), GNR width (w), gate insulator thickness (t(ins)), and electrical parameters such as schottky barrier height (phi(SB)) and applied bias voltage. In this proposed model, different stacking manners of bilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a schottky diode. Based on this assumption, an analytical model and numerical solution of junction current-voltage (I-V) are presented, in which temperature and applied bias voltage dependence characteristics are highlighted. The presented analytical model is finally compared with silicon schottky diode and also p-n junction diode indicating that turn-on voltage of the BGN schottky diode is smaller than that of the silicon schottky diode and p-n junction diode.