▎ 摘　　要

Solution-processable nonvolatile transistor memory devices on a flexible ITO-PEN substrate are demonstrated using the charge storage dielectrics of poly(methacrylic acid) and graphene oxide (PMAA-GO) composites. The hydrogen bonding interaction effectively disperses GO sheets in the high-k PMAA matrix, leading to the control on the memory characteristics. Besides, the fabricated transistor memory devices have a low operation voltage, a large threshold voltage shift of 5.3-9.4 V, a long retention ability of up to 10(4) s, and good stress endurance of at least 100 cycles.