▎ 摘　　要

The heat centralization of high power light emitting diode becomes a challengeable issue by reason of the strong relationship between device reliability and operating temperature. The purpose of this work is to study the thermal behavior of light emitting diode device with graphene film transferred to the substrate surface. The experiment results show that junction temperature of the device with graphene film transferred to the alumina ceramic substrate surface is about 2.2 degrees C lower. And the thermal resistance is low by 3.11 K/W compared to that of normal device. It is validated that graphene film can improve the thermal conductivity ability of the alumina ceramic substrate. Accordingly, the results are helpful in enhancing the performance and reliability of high power light emitting diode. (C) 2017 The Electrochemical Society. All rights reserved.