▎ 摘　　要

The switching capabilities and RF performance of graphene nanoribbon field-effect transistors (GNRFETs) in the presence of electron-phonon scattering are examined. Self-consistent atomistic simulations based on the nonequilibrium Green's function (NEGF) formalisms are used. We have studied the influence of incoherent transport on the most important digital parameters such as I-on, I-off , I-on/I-off, the subthreshold swing, and the drain-induced barrier lowering (DIBL) versus the channel length. Furthermore, the effects of phonon scattering on the gate capacitance and the transconductance are investigated in order to calculate the intrinsic cut-off frequency, switching delay, and the power-delay product of non-ballistic GNRFETs. We have shown that band-to-band tunneling regime is dominated by the phonon-assisted tunneling. Therefore, the off-current and the sub-threshold swing are deteriorated by this phenomenon. Furthermore, the scattering results in a decrease of intrinsic cut-off frequency and increase of the gate delay and energy consumed per switching event.