▎ 摘　　要

The possibility of efficient work function tuning of high-quality graphene, grown on 6H-SiC(0001), by covering it with thermally evaporated rhenium heptoxide (Re2O7) is presented. Raman spectroscopy, X-ray photoelectron spectroscopy, and ultraviolet electron spectroscopy are used for structural, chemical, and electronic characterization of Re2O7/graphene heterostructures. The deposited oxide does not induce any defects in the high-quality graphene lattice and results in a relatively small change in optical transmittance. The observed increase in the work function of the Re2O7/graphene heterostructure (+0.76 eV) emphasizes great potential of modified graphene for use as transparent anode and hole transport layer in organic electronics.