• 文献标题:   CuNi binary alloy catalyst for growth of nitrogen-doped graphene by low pressure chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   PAPON R, SHARMA KP, MAHAYAVANSHI RD, SHARMA S, VISHWAKARMA R, ROSMI MS, KAWAHARA T, CLINE J, KALITA G, TANEMURA M
  • 作者关键词:   binary alloy, doping, twisted bilayer, chemical vapor deposition, graphene
  • 出版物名称:   PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS
  • ISSN:   1862-6254 EI 1862-6270
  • 通讯作者地址:   Nagoya Inst Technol
  • 被引频次:   2
  • DOI:   10.1002/pssr.201600298
  • 出版年:   2016

▎ 摘  要

The CuNi binary alloy can be significant as a catalyst for nitrogen-doped (N-doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N-doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few-layer graphene domains. X-ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N-doped bilayer graphene domains can be synthesized on the CuNi binary alloy. [GRAPHICS] Synthesis of substitutional N-doped bilayer graphene domains on the CuNi binary alloy catalyst. ((c) 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)