• 文献标题:   Two-Dimensional Inverters Based on MoS2-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method
  • 文献类型:   Article
  • 作  者:   LIANG YC, ZHU JK, XIAO F, XU B, WEN T, WU S, LI J, XIA J, WANG ZH
  • 作者关键词:   2d material, nanodevice, 2d semiconductor, device fabrication
  • 出版物名称:   IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
  • ISSN:   2168-6734
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1109/JEDS.2021.3097995
  • 出版年:   2021

▎ 摘  要

Two-dimensional (2D) layered materials offer unique opportunities for building novel nanoscale electronics devices. As the family of 2D materials and their heterostructure continue to grow, it is desirable to have a technique capable of quickly prototyping 2D devices for efficient exploration of new materials and devices. Here, we demonstrate a facile all-dry transfer technique that can very efficiently build 2D devices, and show that a digital inverter can be realized using such technique. Our results can be leveraged for building and testing new types of 2D nanodevices with high throughput.