• 文献标题:   Gate-controlled current switch in graphene
  • 文献类型:   Article
  • 作  者:   SAASKILAHTI K, HARJU A, PASANEN P
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Aalto Univ
  • 被引频次:   2
  • DOI:   10.1063/1.3216580
  • 出版年:   2009

▎ 摘  要

We numerically study cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point, current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable pn-junction. The device operates as a gate-controlled current switch, and the electronic properties of graphene are crucial for efficient performance. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3216580]