▎ 摘 要
Charge transfer at the interface is important for the optoelectronic and photochemical applications of quantum dot-two-dimensional material (QD-2D) hybrids. In this work, Raman spectroscopy was exploited to characterize the CdS QD-graphene hybrids with varied thicknesses of graphene and QD layer. The selection of Raman excitation energies below the QD band gap rules out the photoexcitation effects, and thus, we can focus on equilibrium charge transfer upon hybrid formation. Correlation analysis of Raman spectra shows evidence of electron transfer with concentration on the order of similar to 10(12) cm(-2), as confirmed by electrical measurements. The method used in this study can be applied to characterize the interfacial interaction of various QD-2D hybrids.