• 文献标题:   Influence of plasma process on the nitrogen configuration in graphene
  • 文献类型:   Article
  • 作  者:   SAKULSERMSUK S, SINGJAI P, CHAIWONG C
  • 作者关键词:  
  • 出版物名称:   DIAMOND RELATED MATERIALS
  • ISSN:   0925-9635 EI 1879-0062
  • 通讯作者地址:   Chiang Mai Univ
  • 被引频次:   5
  • DOI:   10.1016/j.diamond.2016.11.001
  • 出版年:   2016

▎ 摘  要

We investigated nitrogen doping into graphene on copper substrates by plasma treatment and by plasma immersion ion implantation (PIII). Two nitrogen bonding configurations were discovered to be dominant for distinct plasma processes. Pyridinic-N (P1) was the preferential N-bonding for doping with PIII while it was pyrrolic-N (P2) for plasma treatment. The ratio of pyrrolic-N and pyridinic-N bonding (P2/P1) in N-doped graphene obtained from our experiments was associated with the simulated ratio of divacancy and monovacancy defect. Vacancy defect species induced by plasma in graphene play a key role to determine preferential N-bonding. Energetic nitrogen ions can stimulate the conversion of pyrrolic-N to pyridinic-N bonding via thermal spike, which leads to the decrease of the P2/P1 ratios when exposing graphene to nitrogen ions by either prolonging implantation or increasing implantation energy. (C) 2016 Elsevier B.V. All rights reserved.