• 文献标题:   Thermal free entanglement of pi-electronic spin and Landau-sublattice states in Rashba monolayer graphene
  • 文献类型:   Article
  • 作  者:   SAFAIEE R, AGHEL F, GOLSHAN MM
  • 作者关键词:   entanglement in extended quantum systems theory, graphene theory
  • 出版物名称:   JOURNAL OF STATISTICAL MECHANICSTHEORY EXPERIMENT
  • ISSN:   1742-5468
  • 通讯作者地址:   Shiraz Univ
  • 被引频次:   4
  • DOI:   10.1088/1742-5468/2016/02/023101
  • 出版年:   2016

▎ 摘  要

Free entanglement-the milestone of any quantum information processing scheme-among the pi-electronic spin and its spatial states in graphene, as a function of temperature, is the main concern of the present report. It is assumed that a perpendicular magnetic field generates the Landau levels so that a coupling with the pseudo-spin (sublattice) states is enacted. Moreover, the pseudo-Rashba spin-orbit interaction (SOI), responsible for the coupling of spin and sublattice states, is also taken into account. From the structure of the total Hamiltonian, we introduce a Casimir operator which, in due turn, assists the development of a simple but efficient algorithm for our numerical computation. We then proceed by constructing the thermal density operator, its partially transposed one and, thereby, compute the negativity, the proper measure of free hybrid entanglement, at any temperature. Our results show that the negativity is nonvanishing at absolute zero temperature due to the fact that the ground state is an entangled one. Moreover, our results indicate that the negativity, at certain temperatures, exhibits maxima. The temperatures at which the entanglement (free) is maximal strongly depend on the magnetic field and pseudo-Rashba spin-orbit strength; decreasing the magnetic field and/or increasing the pseudo-Rashba parameter (PRP) enhances the maximal entanglement monotonically. As the temperature increases, however, it is shown that the negativity decreases asymptotically to zero. As a result, there exists distillable entanglement amid the pi-electronic spin and its spatial states in graphene at any finite temperature.