▎ 摘　　要

Resistive switching memory devices were fabricated utilizing graphene quantum dot (GQD): poly(methyl silsesquioxane) (PMSSQ) hybrid nanocomposites. Current-voltage curves for the Al/GQD: PMSSQ/indium-tin-oxide devices at room temperature showed write-once-read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 10(6) due to the homogeneous dispersion of the GQDs in the PMSSQ matrix. The WORM devices maintained retention times larger than 2 x 10(4) s under ambient conditions. The devices showed high device-to-device reproducibility with threshold-voltage distributions between 3 and 5V. The ON state currents remained between 10(-6) and 10(-3) A, and the OFF state currents maintained between 10(-12) and 10(-9) A. The operating mechanisms concerning the interaction between the GQDs and the PMSSQ matrix for the resistive-switch phenomenon were analyzed on the basis of the I-V results and with the aid of the energy band diagram. Published by AIP Publishing.