• 文献标题:   Influence of N-doping on the structural and photoluminescence properties of graphene oxide films
  • 文献类型:   Article
  • 作  者:   KHAI TV, NA HG, KWAK DS, KWON YJ, HAM H, SHIM KB, KIM HW
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Hanyang Univ
  • 被引频次:   47
  • DOI:   10.1016/j.carbon.2012.04.005
  • 出版年:   2012

▎ 摘  要

Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N. (c) 2012 Elsevier Ltd. All rights reserved.