▎ 摘　　要

High efficient solar cell is highly demanded for sustainable development of human society, leading to the cutting-edge research on various types of solar cells. The physical picture of graphene/semiconductor van der Waals Schottky diode is unique as Fermi level of graphene can be tuned by gate structure relatively independent of semiconductor substrate. However, the reported gated graphene/semiconductor heterostructure has power conversion efficiency (PCE) normally less than 10%. Herein, utilizing a designed graphene-dielectric-graphene gating structure for graphene/GaAs heterojunction, we have achieved solar cell with PCE of 18.5% and open circuit voltage of 0.96 V. Drift-diffusion simulation results agree well with the experimental data and predict this device structure can work with a PCE above 23.8%. This research opens a door of high efficient solar cell utilizing the graphene/semiconductor heterostructure. (C) 2015 Elsevier Ltd. All rights reserved.