▎ 摘　　要

The Goos-Hfinchen (GH) shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration. It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate. Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.