▎ 摘　　要

In this work, we present a schematic configuration and device model for a graphene-nanoribbon (GNR)-array-based nanolaser, which consists of a three-variable rate equations that takes into account carrier capture and Pauli blocking in semiconductor GNR-array lasers to analyze the steady-state properties and dynamics in terms of the role of the capture rate and the gain coefficient in GNR array nanolasers. Furthermore, our GNR-array nanolaser device model can be determined as two distinct two-variable reductions of the rate equations in the limit of large capture rates, depending on their relative values. The first case leads to the rate equations for quantum well lasers, exhibiting relaxation oscillations dynamics. The second case corresponds to GNRs nearly saturated by the carriers and is characterized by the absence of relaxation oscillations. Our results here demonstrated that GNR-array as gain material embedded into a high finesse microcavity can serve as an ultralow lasing threshold nanolaser with promising applications ranging widely from optical fiber communication with increasing data processing speed to digital optical recording and biology spectroscopy.