▎ 摘　　要

With the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted transfer-free technology of graphene chemical vapor deposition on GaN. The nickel film plays the dual role of etching mask and growth catalyst, and is removed by the subsequent "penetration etching" process, achieving good direct contact between the graphene and GaN. The results show that the graphene effectively improves the current spreading of GaN-based LEDs and enhances their electrical performance. This scheme avoids the wrinkles and cracks of graphene from the transfer process, and is not only suitable for the combination of graphene and GaN-based LEDs, but also provides a solution for the integration of graphene and other materials.